![]() These slurry particles and chemicals work with the pressure P applied on the wafer top surface and the relative movement between the wafer and the pad/belt to remove the wafer materials and planarize the wafer surface. ![]() Slurries with nano-scale abrasive particles and special chemicals are distributed into the wafer and pad/belt interface. ![]() During a CMP process, a silicon wafer with size (diameter) ranging from 4 inch (100mm) to 12 inch (300mm), patterned or blanket, is rotated about its axis while being pressed facedown by a carrier against a polishing platen covered with a soft polymer pad/belt. ![]() The last fifteen years have seen the broad application of chemical-mechanical planarization, also known as chemical-mechanical polishing (CMP), in sub-micron integrated circuit (IC) fabrication. ![]()
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